2003. 12. 23 1/4 semiconductor technical data kra307e~KRA309E epitaxial planar pnp transistor revision no : 1 switching application. interface circuit and driver circuit application. features with built-in bias resistors simplify circuit design reduce a quantity of parts and manufacturing process high packing density. dim millimeters a b d e esm 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 c g h j 1 3 2 e b d a g h c j 1. common (emitter) 2. in (base) 3. out (collector) + _ + _ + _ + _ + _ + _ type no. r1(k ) r2(k ) kra307e 10 47 kra308e 22 47 KRA309E 47 22 characteristic symbol rating unit output voltage kra307e 309e v o -50 v input voltage kra307e v i -30, 6 v kra308e -40, 7 KRA309E -40, 15 output current kra307e 309e i o -100 ma power dissipation p d 100 mw junction temperature t j 150 storage temperature range t stg -55 150 type kra307e kra308e KRA309E mark ph pi pj equivalent circuit bias resistor values maximum rating (ta=25 ) mark spec r1 r2 common(+) out in type name marking http:///
2003. 12. 23 2/4 kra307e~KRA309E revision no : 1 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit output cut-off current kra307e 309e i o(off) v o =-50v, v i =0 - - -500 na dc current gain kra307e g i v o =-5v, i o =-10ma 80 150 - kra308e 80 150 - KRA309E 70 140 - output voltage kra307e 309e v o(on) i o =-10ma, i i =-0.5ma - -0.1 -0.3 v input voltage (on) kra307e v i(on) v o =-0.2v, i o =-5ma - -1.2 -1.8 v kra308e - -1.8 -2.6 KRA309E - -3.0 -5.8 input votlage (off) kra307e v i(off) v o =-5v, i o =-0.1ma -0.5 -0.75 - v kra308e -0.6 -0.88 - KRA309E -1.5 -1.82 - transition frequency kra307e 309e f t * v o =-10v, i o =-5ma - 200 - mhz input current kra307e i i v i =-5v - - -0.88 ma kra308e - - -0.36 KRA309E - - -0.16 switching time rise time kra307e t r v o =-5v, v in =-5v r l =1k - 0.07 - s kra308e - 0.20 - KRA309E - 0.38 - storage time kra307e t stg - 1.1 - kra308e - 1.3 - KRA309E - 0.7 - fall time kra307e t f - 0.35 - kra308e - 0.4 - KRA309E - 0.48 - note : * characteristic of transistor only. http:///
2003. 12. 23 3/4 kra307e~KRA309E revision no : 1 i - v i(on) input on voltage v (v) -0.1 -0.3 -1 -3 -0.3 o output current i (ma) o i(on) i - v i(on) input on voltage v (v) o output current i (ma) o i(on) i - v i(on) input on voltage v (v) o output current i (ma) o i(on) i - v i(off) input off voltage v (v) o output current i ( a) o i(off) i - v i(off) input off voltage v (v) o output current i ( a) o i(off) i - v i(off) input off voltage v (v) o output current i ( a) o i(off) -10 -30 -100 -0.5 -1 -3 -5 -10 -30 -50 -100 kra307e -0.1 -0.5 -0.3 -1 -10 -3 -5 -0.3 -100 -50 -30 kra308e -30 -1 -3 -10 -100 -0.1 -0.3 -0.5 -1 -0.3 -30 -1 -3 -10 -100 -10 -5 -3 -30 -100 -50 KRA309E 0 -50 -30 -100 -1k -300 -500 -3k kra307e v =-0.2v o ta=100 c ta=25 c ta=-25 c -25 25 100 ta=25 c ta=-25 c ta=100 c v =-5v o v =-0.2v o ta=100 c ta=-25 c ta=25 c v =-0.2v o -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 ta=100 c ta=25 c ta=-25 c -1.4 -500 -0.4 -50 -30 -300 -100 -0.2 ta=-25 c -0.6 -0.8 ta=100 c ta=25 c -1.0 -1.2 -1k -3k v =-5v kra308e o -1.6 -2.6 -500 -0.6 -50 -30 -300 -100 -0.2 ta=- 25 c -1.0 -1.4 ta=100 c ta=25 c -1.8 -2.2 -1k -3k v =-5v KRA309E o -3.0 -1.8 -3.4 http:///
2003. 12. 23 4/4 kra307e~KRA309E revision no : 1 output current i (ma) dc current gain g -3 -1 20 50 -10 o output current i (ma) o output current i (ma) o -30 i dc current gain g i dc current gain g i 100 1k v =-5v kra307e o g - i io g - i io g - i io -100 300 500 -3 -1 20 50 100 500 300 1k kra308e v =-5v o -10 -30 -100 -3 -1 20 50 100 500 300 1k KRA309E v =-5v o -10 -30 -100 ta=100 c ta=25 c ta=-25 c ta=100 c ta=25 c ta=-25 c ta=100 c ta=25 c ta=-25 c http:///
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